IGZO is an amorphous oxide containing indium, gallium and zinc, and its carrier mobility is 20 - 30 times that of amorphous silicon. It can greatly improve the charging and discharging rate of TFT pixel electrode, and improve the response speed of pixels, thereby achieving faster refresh rate. At the same time, faster response also greatly improves the line scanning rate of pixels, thus making ultra-high resolution possible in TFT-LCD. In addition, due to the reduced number of transistors and improved light transmittance per pixel, IGZO displays have less energy consumption and higher efficiency. Metal oxide TFT has the advantages of high mobility, good film uniformity, low process temperature, high stability and low manufacturing cost.